NXP Semiconductors BAT54S/DG/B4R
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BAT54S/DG/B4R
1786-BAT54S/DG/B4R
二极管 - 射频
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Diode Schottky 0.2A Automotive 3-Pin TO-236AB
1最小包装量--
BAT54S/DG/B4R详情
NXP Semiconductors BAT54S/DG/B4R重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
30
Maximum Continuous Forward Current (A)
0.2
Peak Non-Repetitive Surge Current (A)
0.6
Peak Forward Voltage (V)
Peak Reverse Current (uA)
2@25V
Maximum Junction Ambient Thermal Resistance
500K/W
Maximum Diode Capacitance (pF)
10
Maximum Power Dissipation (mW)
250
Peak Reverse Recovery Time (ns)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
AEC Qualified Number
AEC-Q101
Supplier Package
TO-236AB
Mounting
表面贴装
Package Height
1(Max)
Package Length
3(Max)
Package Width
1.4(Max)
PCB changed
3
类型
肖特基二极管
引脚数量
3
配置
双系列
BAT54S/DG/B4R拓展信息
NXP USA Inc.
NXP USA Inc.
NXP Semiconductors
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.
NXP USA Inc.








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