NXP Semiconductors BUK7Y12-100E
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BUK7Y12-100E
1786-BUK7Y12-100E
晶体管 - 特殊用途
--
大陆
立即发货

85A, 100V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK56-4
1最小包装量--
BUK7Y12-100E详情
NXP Semiconductors BUK7Y12-100E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
YES
Number of pins
26
终端数量
4
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x13
Row pitch
2.54mm
Gross weight
1.39 g
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G4
Drain Current-Max (ID)
85 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...163°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
TIN
附加功能
雪崩 额定
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
Current rating
1.5A
参考标准
AEC-Q101; IEC-60134
JESD-30代码
R-PSSO-G4
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
MO-235
漏极-源极导通最大电阻
0.012 Ω
脉冲漏极电流-最大值(IDM)
339 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
139 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
60V
个人资料
beryllium copper
饱和电流
1
Plating thickness
0.254µm
Flammability rating
UL94V-0
BUK7Y12-100E拓展信息
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