NXP Semiconductors BUK9K6R2-40E

表面安装

YES

Housing material

nickel-plated brass

终端数量

6

晶体管元件材料

SILICON

外壳材料

2

Rohs Code

有

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Package Description

SMALL OUTLINE, R-PDSO-G6

Drain Current-Max (ID)

40 A

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

Dielectric strength

2000 (50 Hz / 1 min) V

LED operational hours

≥40000

Head and button shape

ring - cone; protruding flat button

Mounting diameter

16 mm

Gross weight

14.80

Transport package size/quantity

62*27.5*28/100

Indicator type

ring

Switching scheme

ON-(ON) without fixing

Protection class

IP65

Number of switching cycles (electrical)

≥50000

Backlight voltage

12 V

Relative humidity

45...85 %

Nominal voltage

250 V

JESD-609代码

e3

ECCN 代码

EAR99

端子表面处理

TIN

附加功能

雪崩 额定

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

unknown

参考标准

AEC-Q101; IEC-60134

JESD-30代码

R-PDSO-G6

Contact resistance

≤50 mΩ

配置

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Insulation resistance

≥1000 MΩ

操作模式

增强型MOSFET

箱体转运

DRAIN

Switch type

Vandal-resistant LAS2-GQPF series button with backlight

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

Operating temperature range

-25…+55 °C

Rated current

3 A

漏极-源极导通最大电阻

0.0062 Ω

脉冲漏极电流-最大值(IDM)

295 A

DS 击穿电压-最小值

40 V

雪崩能量等级（Eas）

166 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

饱和电流

1

触点

3Pin+2Pin

Backlight color

green