onsemi NCV8406DD1CR2G

包装/外壳

SOIC-8

RoHS

符合RoHS标准

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 VDC

Rds On - Drain-Source Resistance

210 mOhms

Vgs - Gate-Source Voltage

- 14 V, + 14 V

Vgs th - Gate-Source Threshold Voltage

2 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1.2 W

Channel Mode

Enhancement

Fall Time

692 ns

Factory Pack Quantity

2500

Typical Turn-Off Delay Time

1600 ns

Typical Turn-On Delay Time

127 ns

包装

Reel

系列

NCV8406DD1CR2G

配置

Dual

通道数量

2 Channel

上升时间

486 ns

晶体管类型

2-Channel