onsemi NTB7D3N15MC

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

D2PAK-3 (TO-263-3)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

15.2A (Ta), 101A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Power Dissipation (Max)

3.75W (Ta), 166W (Tc)

Continuous Drain Current Id

101

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

166 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

53 nC

Rds On - Drain-Source Resistance

7.3 mOhms

RoHS

N

Id - Continuous Drain Current

101 A

Qualification

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

166

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.3mOhm @ 62A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 342μA

输入电容(Ciss)(Max)@Vds

4250 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

53 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET