onsemi NTBGS002N06C

安装类型

表面贴装

包装/外壳

TO-263-7, D2Pak (6 Leads + Tab)

表面安装

YES

供应商器件包装

D2PAK (TO-263)

终端数量

6

晶体管元件材料

SILICON

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

30A (Ta), 211A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 12V

Power Dissipation (Max)

3.7W (Ta), 178W (Tc)

Continuous Drain Current Id

211

Number of Elements per Chip

1

Package Type

TO-263-7

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

178 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

62.1 nC

Rds On - Drain-Source Resistance

2.2 mOhms

RoHS

Details

Id - Continuous Drain Current

211 A

MSL

MSL 1 - Unlimited

Qualification

-

Package Description

SMALL OUTLINE, R-PSSO-G6

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

NTBGS002N06C

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

5.76

Drain Current-Max (ID)

252 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

compliant

引脚数量

7

JESD-30代码

R-PSSO-G6

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

178

箱体转运

DRAIN

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.1mOhm @ 45A, 12V

不同 Id 时 Vgs(th)（最大值）

4V @ 225μA

输入电容(Ciss)(Max)@Vds

4620 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

62.1 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

JEDEC-95代码

TO-263CB

最大漏极电流 (Abs) (ID)

252 A

漏极-源极导通最大电阻

0.002 Ω

DS 击穿电压-最小值

60 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

242 W

场效应管特性

-

反馈上限-最大值 (Crss)

26 pF

产品类别

MOSFET