onsemi NTC020N120SC1

安装类型

表面贴装

包装/外壳

Die

供应商器件包装

Die

厂商

onsemi

Package

Tray

Product Status

最后一次购买

Current - Continuous Drain (Id) @ 25℃

103A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.3V @ 20mA

Power Dissipation (Max)

535W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

535 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 15 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

203 nC

Rds On - Drain-Source Resistance

28 mOhms

Id - Continuous Drain Current

103 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

28mOhm @ 60A, 20V

输入电容(Ciss)(Max)@Vds

2890 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

203 nC @ 20 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+25V, -15V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET