onsemi NTD360N65S3H

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

D-PAK (TO-252)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

83W (Tc)

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

10A

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

17.5 nC

Rds On - Drain-Source Resistance

360 mOhms

RoHS

Details

Id - Continuous Drain Current

10 A

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

83W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

360mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 700μA

输入电容(Ciss)(Max)@Vds

916 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

17.5 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET