onsemi NTDS015N15MCT4G

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

引脚数

3

供应商器件包装

DPAK

厂商

onsemi

Product Status

最后一次购买

Current - Continuous Drain (Id) @ 25℃

11A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 162μA

Power Dissipation (Max)

3.8W (Ta), 83W (Tc)

Base Product Number

NTDS015

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.012699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

27 nC

Rds On - Drain-Source Resistance

15 mOhms

RoHS

N

Id - Continuous Drain Current

50 A

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

50A

Package Description

,

Manufacturer Package Code

369C

Manufacturer Part Number

NTDS015N15MCT4G

Part Life Cycle Code

活跃

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

5.76

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

无铅代码

有

子类别

MOSFETs

Brand Name

安森美半导体

通道数量

1 Channel

功率耗散

83W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

15mOhm @ 29A, 10V

输入电容(Ciss)(Max)@Vds

2120 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

27 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET

达到SVHC

unknown