onsemi NTH4L040N120SC1

包装/外壳

TO-247-4

安装类型

通孔

引脚数

4

供应商器件包装

TO-247-4L

Base Product Number

NTH4L040

Power Dissipation (Max)

319W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.3V @ 10mA

Drive Voltage (Max Rds On, Min Rds On)

20V

Current - Continuous Drain (Id) @ 25℃

58A (Tc)

Product Status

活跃

Package

Tube

厂商

onsemi

Continuous Drain Current Id

58

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

319 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 15 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

106 nC

Rds On - Drain-Source Resistance

56 mOhms

RoHS

Details

Id - Continuous Drain Current

58 A

Number of Elements per Chip

1

Package Type

TO-247-4

操作温度

-55°C ~ 175°C (TJ)

系列

-

子类别

MOSFETs

通道数量

1 Channel

功率耗散

319

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

56mOhm @ 35A, 20V

输入电容(Ciss)(Max)@Vds

1762 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

106 nC @ 20 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+25V, -15V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET