onsemi NTHL025N065SC1

安装类型

通孔

包装/外壳

TO-247-3

引脚数

3

供应商器件包装

TO-247-3

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.3V @ 15.5mA

Power Dissipation (Max)

348W (Tc)

Package Type

TO-247

Continuous Drain Current Id

99A

Factory Pack QuantityFactory Pack Quantity

30

Manufacturer

onsemi

Brand

onsemi

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

348 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

164 nC

Rds On - Drain-Source Resistance

28.5 mOhms

Id - Continuous Drain Current

99 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

348W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

28.5mOhm @ 45A, 18V

输入电容(Ciss)(Max)@Vds

3480 pF @ 325 V

门极电荷(Qg)(最大)@Vgs

164 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -8V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET