onsemi NTMFS006N08MC

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

8-PQFN (5x6)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9.3A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Power Dissipation (Max)

1W (Ta), 78W (Tc)

Base Product Number

NTMFS006

Continuous Drain Current Id

82

Number of Elements per Chip

2

Package Type

PQFN8

Channel Mode

Enhancement

MSL

MSL 3 - 168 hours

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

30 nC

Rds On - Drain-Source Resistance

6 mOhms

RoHS

N

Id - Continuous Drain Current

32 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

78

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6mOhm @ 32A, 10V

输入电容(Ciss)(Max)@Vds

2300 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

30 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET