onsemi NTMFS006N08MC

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-PQFN (5x6)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9.3A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

1W (Ta), 78W (Tc)

Base Product Number

NTMFS006

Continuous Drain Current Id

82

Number of Elements per Chip

2

Package Type

PQFN8

Channel Mode

Enhancement

MSL

MSL 3 - 168 hours

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

30 nC

Rds On - Drain-Source Resistance

6 mOhms

RoHS

N

Id - Continuous Drain Current

32 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

78

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6mOhm @ 32A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250μA

输入电容(Ciss)(Max)@Vds

2300 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

30 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET