参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
8-PQFN (5x6)
厂商
onsemi
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
10.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Power Dissipation (Max)
2.7W (Ta), 147W (Tc)
Base Product Number
NTMFS011
Continuous Drain Current Id
78
Number of Elements per Chip
1
Package Type
PQFN 5 x 6
Channel Mode
Enhancement
Vds - Drain-Source Breakdown Voltage
150 V
Vgs th - Gate-Source Threshold Voltage
4.5 V
Pd - Power Dissipation
147 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.004308 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Manufacturer
onsemi
Brand
onsemi
Qg - Gate Charge
30.6 nC
Rds On - Drain-Source Resistance
11.5 mOhms
RoHS
Details
Id - Continuous Drain Current
35 A
MSL
MSL 1 - Unlimited
Qualification
-
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
引脚数量
8
通道数量
1 Channel
功率耗散
2.7
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
11.5mOhm @ 35A, 10V
不同 Id 时 Vgs(th)(最大值)
4.5V @ 194μA
输入电容(Ciss)(Max)@Vds
3592 pF @ 75 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 10 V
漏源电压 (Vdss)
150 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET