onsemi NTMFS1D7N03CGT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

引脚数

5

供应商器件包装

5-DFN (5x6) (8-SOFL)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 90μA

Power Dissipation (Max)

3.8W (Ta), 87W (Tc)

厂商

onsemi

Continuous Drain Current Id

170

Channel Mode

Enhancement

Package Type

DFN

Number of Elements per Chip

1

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

87 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

1.74 mOhms

Id - Continuous Drain Current

170 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

通道数量

1 Channel

功率耗散

87

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.74mOhm @ 18A, 10V

输入电容(Ciss)(Max)@Vds

3780 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

48 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-