onsemi NTMFS4C808NAT3G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Ta), 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

760mW (Ta), 25.5W (Tc)

Factory Pack QuantityFactory Pack Quantity

5000

Manufacturer

onsemi

Brand

onsemi

RoHS

Details

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.3 V

Pd - Power Dissipation

25.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

18.2 nC

Rds On - Drain-Source Resistance

8.5 mOhms

Id - Continuous Drain Current

16.4 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.8mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

2.1V @ 250μA

输入电容(Ciss)(Max)@Vds

1670 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

18.2 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET