onsemi NTMFS4D2N10MDT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

16.4A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

2.8W (Ta), 132W (Tc)

Continuous Drain Current Id

113

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

132 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

25 nC

Rds On - Drain-Source Resistance

4.3 mOhms

Id - Continuous Drain Current

113 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

引脚数量

5

通道数量

1 Channel

功率耗散

132

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3mOhm @ 46A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 239μA

输入电容(Ciss)(Max)@Vds

3100 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

60 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-