onsemi NTMFS5C612NT1G-TE

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A (Ta), 230A (Tc)

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Base Product Number

NTMFS5

Continuous Drain Current Id

230

Number of Elements per Chip

1

Package Type

DFN5

Channel Mode

Enhancement

MSL

-

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

3.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

91 nC

Rds On - Drain-Source Resistance

1.5 mOhms

Id - Continuous Drain Current

235 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

引脚数量

5

通道数量

1 Channel

功率耗散

170

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.6mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250μA

输入电容(Ciss)(Max)@Vds

4830 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

60.2 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET