onsemi NTMFS7D8N10GTWG

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

8-PQFN (5x6)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Ta), 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 254μA

Power Dissipation (Max)

3W (Ta), 187W (Tc)

Continuous Drain Current Id

110

Number of Elements per Chip

1

Package Type

PQFN 5 x 6

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

187 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

92 nC

Rds On - Drain-Source Resistance

7.6 mOhms

RoHS

N

Id - Continuous Drain Current

110 A

MSL

MSL 1 - Unlimited

Qualification

-

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

187

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.6mOhm @ 48A, 10V

输入电容(Ciss)(Max)@Vds

6180 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

92 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET