onsemi NTMTS1D6N10MCTXG

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-DFNW (8.3x8.4)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

36A (Ta), 273A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

5W (Ta), 291W (Tc)

Continuous Drain Current Id

273

Qualification

-

Number of Elements per Chip

1

Package Type

DFNW8

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

291 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

106 nC

Rds On - Drain-Source Resistance

1.7 mOhms

RoHS

N

Id - Continuous Drain Current

273 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

291

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.7mOhm @ 90A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 650μA

输入电容(Ciss)(Max)@Vds

7630 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

106 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET