onsemi NTTFS8D1N08HTAG

安装类型

表面贴装

包装/外壳

8-PowerWDFN

供应商器件包装

8-WDFN (3.3x3.3)

厂商

onsemi

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Ta), 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.2W (Ta), 63W (Tc)

Base Product Number

NTTFS8

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

9.1 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

63 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

23 nC

Rds On - Drain-Source Resistance

8.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

23.8 ns

Id - Continuous Drain Current

61 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.3mOhm @ 16A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 80μA

输入电容(Ciss)(Max)@Vds

1450 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

上升时间

13 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET