onsemi NVH4L040N65S3F

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

厂商

onsemi

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

65A (Tc)

Power Dissipation (Max)

446W (Tc)

Base Product Number

NVH4L040

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

65A

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

446 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

160 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Id - Continuous Drain Current

65 A

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

功率耗散

446W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 32.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.1mA

输入电容(Ciss)(Max)@Vds

5665 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

160 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET