onsemi NVMFS5C420NLT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

引脚数

5

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Ta), 277A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 200μA

Power Dissipation (Max)

3.8W (Ta), 146W (Tc)

Continuous Drain Current Id

277

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

146 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

100 nC

Rds On - Drain-Source Resistance

1 mOhms

RoHS

N

Id - Continuous Drain Current

277 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

146

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

7020 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

100 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET