onsemi NVMFS5C420NWFT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

引脚数

5

供应商器件包装

5-DFN (5x6) (8-SOFL)

Current - Continuous Drain (Id) @ 25℃

43A (Ta), 268A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 200μA

Power Dissipation (Max)

3.8W (Ta), 150W (Tc)

厂商

onsemi

Product Status

活跃

Qualification

AEC-Q101

Continuous Drain Current Id

268

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

82 nC

Rds On - Drain-Source Resistance

1.1 mOhms

Id - Continuous Drain Current

268 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

通道数量

1 Channel

功率耗散

150

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.1mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

5340 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

82 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-