onsemi NVMFS6H848NLWFT1G

安装类型

Surface Mount, Wettable Flank

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFNW (4.9x5.9) (8-SOFL-WF)

厂商

onsemi

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

13A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 70μA

Power Dissipation (Max)

3.7W (Ta), 73W (Tc)

Base Product Number

NVMFS6

Continuous Drain Current Id

59

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

73 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.006173 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

52 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

16 nC

Rds On - Drain-Source Resistance

9.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

34 ns

Id - Continuous Drain Current

57 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

Reel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

73

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.8mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1420 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

25 nC @ 10 V

上升时间

33 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET