onsemi NVMFWS3D0P04M8LT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

28A (Ta), 183A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.9W (Ta), 171W (Tc)

Continuous Drain Current Id

183

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.4 V

Pd - Power Dissipation

171 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

124 nC

Rds On - Drain-Source Resistance

2.7 mOhms

RoHS

N

Id - Continuous Drain Current

183 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

171

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

2.7mOhm @ 30A,10V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 2mA

输入电容(Ciss)(Max)@Vds

5827 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

124 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET