onsemi NVMYS6D2N06CLTWG

安装类型

表面贴装

包装/外壳

SOT-1023, 4-LFPAK

供应商器件包装

LFPAK4 (5x6)

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

17A (Ta), 71A (Tc)

Power Dissipation (Max)

3.6W (Ta), 61W (Tc)

Base Product Number

NVMYS6

Continuous Drain Current Id

71

MSL

-

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

61 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

6.1 mOhms

RoHS

Details

Id - Continuous Drain Current

71 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

61

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.1mOhm @ 35A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 53μA

输入电容(Ciss)(Max)@Vds

1400 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET