onsemi NVTFS6H888NLTAG

包装/外壳

8-PowerWDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

8-WDFN (3.3x3.3)

厂商

onsemi

Base Product Number

NVTFS6

Power Dissipation (Max)

2.9W (Ta), 23W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 15μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

4.9A (Ta), 14A (Tc)

Product Status

活跃

Continuous Drain Current Id

14

Number of Elements per Chip

1

Package Type

WDFN

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

23 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

6 nC

Rds On - Drain-Source Resistance

50 mOhms

RoHS

Details

Id - Continuous Drain Current

14 A

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

23

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

50mOhm @ 5A, 10V

输入电容(Ciss)(Max)@Vds

258 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

6 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET