onsemi NXH010P120M3F1PG

包装/外壳

PIM-18

RoHS

符合RoHS标准

Mounting Styles

螺钉安装

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

105 A

Rds On - Drain-Source Resistance

14.5 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.4 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

272 W

Fall Time

15 ns

Factory Pack Quantity

28

Typical Turn-Off Delay Time

98 ns

Typical Turn-On Delay Time

23 ns

包装

Tray

类型

电源模块

配置

Half-Bridge

通道数量

2 Channel

上升时间

15 ns

产品

SiC MOSFET Modules

高度

12.35 mm

长度

63.3 mm

宽度

34.1 mm