onsemi NXH015P120M3F1PTG

包装/外壳

PIM-18

RoHS

符合RoHS标准

Mounting Styles

螺钉安装

Transistor Polarity

N-Channel

Id - Continuous Drain Current

77 A

Rds On - Drain-Source Resistance

20 mOhms

Vgs - Gate-Source Voltage

+ 1.2 kV

Vgs th - Gate-Source Threshold Voltage

- 10 V, 22 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

198 W

Fall Time

8 ns

Factory Pack Quantity

28

Typical Turn-Off Delay Time

94 ns

Typical Turn-On Delay Time

25 ns

系列

NXH015P120M3F1PTG

包装

Tray

类型

Module

配置

Half-Bridge

通道数量

2 Channel

上升时间

9 ns

产品

SiC MOSFET Modules

高度

12.35 mm

长度

63.3 mm

宽度

34.1 mm