注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥204.28884
10
¥192.72532
100
¥181.816338
500
¥171.524852
1000
¥161.815898
NXV65HR82DZ2详情
onsemi NXV65HR82DZ2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
16-SSIP Exposed Pad, Formed Leads
厂商
onsemi
Package
Tube
Product Status
活跃
Number of Elements per Chip
4
Package Type
APMCA-A16
Vds - Drain-Source Breakdown Voltage
650 V
Vgs th - Gate-Source Threshold Voltage
5 V
Pd - Power Dissipation
126 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 125 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
12
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi
Qg - Gate Charge
79.7 nC
Rds On - Drain-Source Resistance
82 mOhms
RoHS
Details
Id - Continuous Drain Current
26 A
Continuous Drain Current Id
26A
系列
Automotive, AEC-Q101
包装
Tube
类型
MOSFET
子类别
MOSFETs
技术
Si
引脚数量
16
电压-隔离度
5000Vrms
配置
H-Bridge
通道数量
4 Channel
电压
650 V
电流
26 A
功率耗散
126W
产品类别
MOSFET
信道型
N通道
产品类别
MOSFET
NXV65HR82DZ2拓展信息
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor







哦! 它是空的。