ON Semiconductor FDMC4435BZ-F127

包装/外壳

Power-33-8

表面安装

YES

Vds - Drain-Source Breakdown Voltage

30 V

Pd - Power Dissipation

31 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Unit Weight

0.010582 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

FDMC4435BZ_F127

Manufacturer

onsemi

Brand

onsemi / Fairchild

Rds On - Drain-Source Resistance

20 mOhms

RoHS

Details

Id - Continuous Drain Current

8.5 A

Package Description

,

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

FDMC4435BZ-F127

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Risk Rank

5.83

子类别

MOSFETs

技术

Si

Reach合规守则

unknown

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

产品类别

MOSFET

晶体管类型

1 P-Channel

最大漏极电流 (Abs) (ID)

18 A

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

31 W

产品类别

MOSFET

宽度

3.3 mm

高度

0.8 mm

长度

3.3 mm