ON Semiconductor FDPF13N50NZ

包装/外壳

TO-220-3

底架

通孔

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

42 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

39 nC

Rds On - Drain-Source Resistance

540 mOhms

RoHS

Details

Id - Continuous Drain Current

12 A

包装

Tube

子类别

MOSFETs

最大功率耗散

42 W

技术

Si

配置

Single

通道数量

1 Channel

漏源电压 (Vdss)

500 V

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

12 A

输入电容

1.93 nF

最大rds

540 mΩ

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm

无铅

无铅