ON Semiconductor FDZ451PZ

工厂交货时间

1 Week

包装/外壳

WLCSP-4

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

2.3 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.001482 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

6.3 nC

Rds On - Drain-Source Resistance

140 mOhms

RoHS

Details

Id - Continuous Drain Current

2.6 A

Package Description

GRID ARRAY, S-PBGA-B4

Package Style

网格排列

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

FDZ451PZ

Package Shape

SQUARE

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

1.77

Drain Current-Max (ID)

2.6 A

包装

切割胶带

JESD-609代码

e1

端子表面处理

Tin/Silver/Copper (Sn/Ag/Cu)

子类别

MOSFETs

技术

Si

端子位置

BOTTOM

终端形式

BALL

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

S-PBGA-B4

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

产品类别

MOSFET

漏极-源极导通最大电阻

0.14 Ω

DS 击穿电压-最小值

20 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.3 W

反馈上限-最大值 (Crss)

70 pF

产品类别

MOSFET