ON Semiconductor FQPF2P25

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25℃

1.8A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

32W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 250μA

操作温度

-55°C~150°C TJ

包装

Tube

系列

QFET®

已出版

2000

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

4 Ω @ 900mA, 10V

输入电容(Ciss)(Max)@Vds

250pF @ 25V

门极电荷(Qg)(最大)@Vgs

8.5nC @ 10V

漏源电压 (Vdss)

250V

Vgs（最大值）

±30V