ON Semiconductor FQPF9N50CYDTU

安装类型

通孔

包装/外壳

TO-220-3 Full Pack, Formed Leads

供应商器件包装

TO-220F-3 (Y-Forming)

Current - Continuous Drain (Id) @ 25℃

9A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

44W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

操作温度

-55°C~150°C TJ

包装

Tube

系列

QFET®

已出版

2003

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

800mOhm @ 4.5A, 10V

输入电容(Ciss)(Max)@Vds

1030pF @ 25V

门极电荷(Qg)(最大)@Vgs

35nC @ 10V

漏源电压 (Vdss)

500V

Vgs（最大值）

±30V