ON Semiconductor NTBG022N120M3S

包装/外壳

D2PAK-7L

安装类型

表面贴装

供应商器件包装

D2PAK-7

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

58 A

Rds On - Drain-Source Resistance

30 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.4 V

Qg - Gate Charge

148 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

234 W

Channel Mode

Enhancement

Fall Time

14 ns

Forward Transconductance - Min

34 S

Factory Pack QuantityFactory Pack Quantity

800

Typical Turn-Off Delay Time

47 ns

Typical Turn-On Delay Time

18 ns

Continuous Drain Current Id

58

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

NTBG022

Current - Continuous Drain (Id) @ 25℃

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

onsemi

Power Dissipation (Max)

234W (Tc)

Product Status

活跃

Package Type

D2PAK-7L

包装

切割胶带

系列

NTBG022N120M3S

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

功率耗散

234

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30mOhm @ 40A, 18V

不同 Id 时 Vgs(th)（最大值）

4.4V @ 20mA

输入电容(Ciss)(Max)@Vds

3200 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 18 V

上升时间

24 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-