ON Semiconductor NTBG040N120M3S

包装/外壳

D2PAK-7L

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

51 A

Rds On - Drain-Source Resistance

52 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.4 V

Qg - Gate Charge

70 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

329 W

Channel Mode

Enhancement

Fall Time

10 ns

Forward Transconductance - Min

13 S

Typical Turn-Off Delay Time

24 ns

Typical Turn-On Delay Time

11 ns

系列

NTBG040N120M3S

包装

Reel

配置

Single

通道数量

1 Channel

上升时间

16 ns