ON Semiconductor NTH4L028N170M1

包装/外壳

TO-247-4L

安装类型

通孔

供应商器件包装

TO-247-4L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.7 kV

Id - Continuous Drain Current

81 A

Rds On - Drain-Source Resistance

40 mOhms

Vgs - Gate-Source Voltage

- 15 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Qg - Gate Charge

200 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

535 W

Channel Mode

Enhancement

Fall Time

13 ns

Forward Transconductance - Min

31 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

121 ns

Typical Turn-On Delay Time

47 ns

Package

Tube

Base Product Number

NTH4L02

Current - Continuous Drain (Id) @ 25℃

81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

onsemi

Power Dissipation (Max)

535W (Tc)

Product Status

活跃

包装

Tube

系列

NTH4L028N170M1

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 60A, 20V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 20mA

输入电容(Ciss)(Max)@Vds

4230 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

200 nC @ 20 V

上升时间

18 ns

漏源电压 (Vdss)

1700 V

Vgs（最大值）

+25V, -15V

场效应管特性

-