ON Semiconductor NTH4L070N120M3S

包装/外壳

TO-247-4L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

37 A

Rds On - Drain-Source Resistance

91 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.4 V

Qg - Gate Charge

49 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

252 W

Channel Mode

Enhancement

Fall Time

11 ns

Forward Transconductance - Min

9 S

Typical Turn-Off Delay Time

20 ns

Typical Turn-On Delay Time

10 ns

系列

NTH4L070N120M3S

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

12 ns