ON Semiconductor NTH4L075N065SC1

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

Package

Tube

Base Product Number

NTH4L075

Current - Continuous Drain (Id) @ 25℃

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

厂商

onsemi

Power Dissipation (Max)

148W (Tc)

Product Status

活跃

Package Type

TO247-4L

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

148 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

61 nC

Rds On - Drain-Source Resistance

85 mOhms

Id - Continuous Drain Current

38 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

技术

SiCFET (Silicon Carbide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

85mOhm @ 15A, 18V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 5mA

输入电容(Ciss)(Max)@Vds

1196 pF @ 325 V

门极电荷(Qg)(最大)@Vgs

61 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -8V

信道型

N

场效应管特性

-