ON Semiconductor NTHL022N120M3S

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.4 V

Pd - Power Dissipation

352 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

139 nC

Rds On - Drain-Source Resistance

30 mOhms

Id - Continuous Drain Current

68 A

技术

Si

通道数量

1 Channel