ON Semiconductor NTHL1000N170M1

包装/外壳

TO-247-3L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.7 kV

Rds On - Drain-Source Resistance

960 mOhms

Vgs - Gate-Source Voltage

- 15 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Qg - Gate Charge

13.9 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Channel Mode

Enhancement

Fall Time

16 ns

Forward Transconductance - Min

0.6 S

Typical Turn-Off Delay Time

10 ns

Typical Turn-On Delay Time

10 ns

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

6 ns