ON Semiconductor NTPF360N65S3H

包装/外壳

TO-220-3

安装类型

通孔

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

10 A

Rds On - Drain-Source Resistance

360 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

17.5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

26 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

50

Number of Elements per Chip

1

Package Type

TO-220

Qualification

-

Continuous Drain Current Id

10A

系列

SUPERFET III

引脚数量

3

通道数量

1 Channel

功率耗散

26W

信道型

N