ON Semiconductor NTTFSS1D1N02P1E

包装/外壳

WDFN-9

安装类型

表面贴装

供应商器件包装

9-WDFN (3.3x3.3)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

25 V

Id - Continuous Drain Current

264 A

Rds On - Drain-Source Resistance

850 uOhms

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

60 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

89 W

Channel Mode

Enhancement

Fall Time

5.1 ns

Forward Transconductance - Min

146 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

34.7 ns

Typical Turn-On Delay Time

10.8 ns

Package

Tape & Reel (TR)

Base Product Number

NTTFSS1

Current - Continuous Drain (Id) @ 25℃

39A (Ta), 264A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

2W (Ta), 89W (Tc)

Product Status

活跃

系列

NTTFSS1D1N02P1E

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.85mOhm @ 27A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 934µA

输入电容(Ciss)(Max)@Vds

4360 pF @ 13 V

门极电荷(Qg)(最大)@Vgs

60 nC @ 10 V

上升时间

3.4 ns

漏源电压 (Vdss)

25 V

Vgs（最大值）

±16V

场效应管特性

-