ON Semiconductor NV25080MUW3VTBG

包装/外壳

UDFN-8

表面安装

YES

终端数量

8

Qualification

AEC-Q101

Maximum Clock Frequency

10 MHz

Maximum Operating Temperature

+ 150 C

Supply Voltage-Max

5.5 V

Unit Weight

0.000410 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

3000

Active Read Current - Max

3 mA

Supply Voltage-Min

2.5 V

Mounting Styles

SMD/SMT

Interface Type

SPI

Data Retention

200 Year

Manufacturer

onsemi

Brand

onsemi

RoHS

Details

Package Description

HUSSON, SOLCC8,.11,20

Package Style

SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

Moisture Sensitivity Levels

1

Number of Words Code

1000

Package Body Material

PLASTIC/EPOXY

Package Equivalence Code

SOLCC8,.11,20

Manufacturer Package Code

517DH

Operating Temperature-Min

-40 °C

Access Time-Max

80 ns

Operating Temperature-Max

125 °C

Rohs Code

有

Manufacturer Part Number

NV25080MUW3VTBG

Clock Frequency-Max (fCLK)

10 MHz

Number of Words

1024 words

Supply Voltage-Nom (Vsup)

5 V

Package Code

HUSSON

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Samacsys Description

EEPROM 8KB SPI SER CMOS EEPROM

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

4.76

Usage Level

Automotive grade

包装

MouseReel

JESD-609代码

e4

无铅代码

有

端子表面处理

Nickel/Palladium/Gold (Ni/Pd/Au)

子类别

Memory & Data Storage

技术

CMOS

端子位置

DUAL

终端形式

无铅

功能数量

1

端子间距

0.5 mm

Reach合规守则

compliant

JESD-30代码

R-PDSO-N8

Brand Name

安森美半导体

工作电源电压

1.8 V to 5.5 V

电源电压-最大值(Vsup)

5.5 V

温度等级

AUTOMOTIVE

电源电压-最小值(Vsup)

1.8 V

内存大小

8 kbit

工作电源电流

3 mA

操作模式

SYNCHRONOUS

电源电流-最大值

3 mA

访问时间

40 ns

组织结构

1 k x 8

输出特性

3-STATE

座位高度-最大

0.55 mm

内存宽度

8

产品类别

EEPROM

待机电流-最大值

0.000002 A

记忆密度

8192 bit

筛选水平

AEC-Q100

并行/串行

SERIAL

内存IC类型

EEPROM

编程电压

5 V

串行总线类型

SPI

耐力

1000000 Write/Erase Cycles

写入周期时间 - 最大值

5 ms

数据保持时间

100

写入保护

HARDWARE/SOFTWARE

产品类别

EEPROM

宽度

2 mm

长度

3 mm