ON Semiconductor NVD4C05NT4G

生命周期状态

Production (Last Updated: 2 years ago)

工厂交货时间

5 Weeks

包装/外壳

DPAK-3

表面安装

YES

Continuous Drain Current Id

90

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

1.3 V

Qualification

AEC-Q101

Pd - Power Dissipation

57 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.012699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

98 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

31 nC

Rds On - Drain-Source Resistance

4.1 mOhms

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

90 A

Schedule B

8541290080

Manufacturer Lifecycle Status

ACTIVE (Last Updated: 2 years ago)

RoHS

Compliant

Package

Tape & Reel (TR)

Base Product Number

NVD4C05

厂商

onsemi

Product Status

活跃

Package Description

,

Moisture Sensitivity Levels

1

Manufacturer Package Code

369C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Manufacturer Part Number

NVD4C05NT4G

Part Life Cycle Code

活跃

Samacsys Description

MOSFET u2013 Power, Single, N-Channel

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

1.56

包装

MouseReel

系列

*

JESD-609代码

e3

无铅代码

有

端子表面处理

Tin (Sn)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

not_compliant

Brand Name

安森美半导体

配置

Single

通道数量

1 Channel

功率耗散

57

上升时间

107 ns

极性/通道类型

N-CHANNEL

产品类别

MOSFET

最大漏极电流 (Abs) (ID)

61 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

44 W

产品类别

MOSFET