ON Semiconductor NVH4L025N065SC1

包装/外壳

TO-247-4L

Id - Continuous Drain Current

99 A

Rds On - Drain-Source Resistance

28.5 mOhms

Qg - Gate Charge

164 nC

Channel Mode

Enhancement

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

348 W

Vgs th - Gate-Source Threshold Voltage

4.3 V

Vds - Drain-Source Breakdown Voltage

650 V

技术

SiC

通道数量

1 Channel