ON Semiconductor NVH4L030N120M3S

包装/外壳

TO-247-4L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

60 A

Rds On - Drain-Source Resistance

28.5 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

3.13 V

Qg - Gate Charge

107 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

308 W

Channel Mode

Enhancement

Typical Turn-On Delay Time

17.3 ns

Typical Turn-Off Delay Time

37.2 ns

Forward Transconductance - Min

23.7 S

Fall Time

7.36 ns

包装

Tube

通道数量

1 Channel

上升时间

5.16 ns