ON Semiconductor NVH4L040N120M3S

包装/外壳

TO-247-4L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

44 A

Rds On - Drain-Source Resistance

40.8 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

3.22 V

Qg - Gate Charge

75.2 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

235 W

Channel Mode

Enhancement

Fall Time

5.94 ns

Forward Transconductance - Min

18.7 S

Typical Turn-Off Delay Time

26.5 ns

Typical Turn-On Delay Time

13.8 ns

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

4.78 ns